Active matrix substrate, method of manufacturing active matrix substrate, and intermediate transfer substrate for manufacturing active matrix substrate

ABSTRACT

In an active matrix substrate, the substrate includes a pixel region and a peripheral region surrounding the pixel region. A plurality of adhesive layers arranged to form a matrix having rows and columns are arranged in the pixel region, and pluralities of active elements are formed, respectively, on the plural adhesive layers. A spacer layer is formed in the peripheral region, and a uniform pressure is applied between the active element and the adhesive layer in performing the transfer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromprior Japanese Patent Application No. 2003-332815, filed Sep. 25, 2003,the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an active matrix substrate, a methodmanufacturing an active matrix substrate, and an intermediate transfersubstrate for manufacturing an active matrix substrate.

2. Description of the Related Art

An active matrix type display device having active elements arranged onmatrix-like pixels permits realizing a planar type display device of ahigh image quality. Particularly, a liquid crystal display device (LCD),in which a liquid crystal is used as an optical shutter and each pixelis driven by an active element such as a TFT, is widely used in variousdevices such as a PC monitor and a television receiver for a videodisplay.

Also, an organic EL display device that permits displaying a full colorimage on a thin panel has been developed. In the organic EL displaydevice, the organic EL materials that emit light rays of red, green andblue are formed into pixels by an ink jet method or a mask vapordeposition method, and each pixel thus formed is driven by an activeelement such as a thin film transistor (TFT).

In almost all the types of the display device, the active element isformed on a glass substrate. However, the glass substrate tends to becracked and is heavy. Also, the display device having a glass substrateincorporated therein tends to be broken and is heavy. Such being thesituation, it is desirable to develop a tough and lightweight displaydevice. It is also desirable to develop a flexible display device thatcan be bent or folded freely.

Under the circumstances, a display device comprising a flexiblesubstrate excellent in the impact resistance and light in weight such asa plastic substrate attracts attentions as a display device satisfyingthe requirements given above. In the display device of the particulartype, it is necessary for an active element such as a thin filmtransistor (TFT) to be formed on the plastic substrate. Presently,amorphous silicon or polycrystalline silicon (polysilicon) is widelyused for forming the thin film transistor. What should be noted is thatit is absolutely necessary to employ a high temperature process of about350° C. to 600° C. for forming the thin film transistor. On the otherhand, the plastic substrate is resistant to heat of only up to about200° C. It follows that it is difficult to form the thin film transistordirectly on the plastic substrate.

As a method for overcoming the difficulty described above, proposed is amethod of using an element formation substrate and a final substrate inplace of the method of forming an active element directly on the plasticsubstrate. To be more specific, the element formation substrate isformed of a glass substrate having thin film transistors formed thereonat a high density so as to form a thin film transistor array. On theother hand, pluralities of plastic substrates are used as the finalsubstrates. Of course, the thin film transistor array is transferredfrom the element formation substrate onto the plastic substrates used asthe final substrates. The particular method is disclosed in, forexample, Japanese Patent Disclosure (Kokai) No. 6-118441, JapanesePatent Disclosure No. 11-142878 and Japanese Patent Disclosure No.2001-7340. In this method, the thin film transistor equivalent incharacteristics to the conventional thin film transistor can be formedon the plastic substrate because the thin film transistor can be formedat the temperature substantially equal to that for forming theconventional thin film transistor. It should also be noted that thetransfer cost can be lowered because the thin film transistor array canbe transferred from a single element formation substrate onto aplurality of final substrates.

In the conventional method, however, it is possible for even the elementthat should not be transferred to be transferred from the elementformation substrate onto the final substrates so as to give rise to theproblem that the transfer selectivity is lowered.

BRIEF SUMMARY OF THE INVENTION

An object of the present invention is to provide a method ofmanufacturing an active matrix substrate having high transferselectivity, an active matrix substrate manufactured by the particularmanufacturing method, and an intermediate transfer substrate used in themethod of manufacturing the active matrix substrate.

According to an aspect of the present invention, there is provided anactive matrix substrate, comprising:

-   -   a substrate having a pixel region and a peripheral region        surrounding the pixel region;    -   a plurality of adhesive layers arranged in a matrix having rows        and columns in the pixel region;    -   a plurality of active elements formed on the adhesive layers,        respectively; and    -   a spacer layer formed in the peripheral region.

According to another aspect of the present invention, there is provideda method of manufacturing an active matrix substrate, comprising:

-   -   forming active elements on an element formation substrate;    -   bonding the active elements formed on the element formation        substrate to an intermediate transfer substrate;    -   removing the element formation substrate bonded to the        intermediate transfer substrate with the active elements        interposed therebetween;    -   forming adhesive layers in a pixel region of a final substrate        having the pixel region and a peripheral region surrounding the        pixel region;    -   forming a spacer layer in the peripheral region of the final        substrate;    -   transferring the active elements bonded to the intermediate        transfer substrate to the adhesive layer of the final substrate;    -   forming wirings on the final substrate; and    -   connecting the active elements on the final substrate to the        wirings.

According to another aspect of the present invention, there is provideda method of manufacturing an active matrix substrate, comprising:

-   -   forming active elements on a element formation substrate;    -   preparing an intermediate transfer substrate having a first        pixel region and a first peripheral region surrounding the first        pixel region;    -   bonding the active elements on the element formation substrate        to the first pixel region;    -   forming a spacer layer in the first peripheral region;    -   removing the element formation substrate bonded to the        intermediate transfer substrate with the active element        interposed therebetween;    -   preparing a final substrate having a second pixel region and a        second peripheral region surrounding the second pixel region;    -   forming an adhesive layer in the second pixel region;    -   transferring the active elements bonded to the intermediate        transfer substrate to the adhesive layer on the final substrate;    -   forming wirings on the final substrate; and    -   connecting the active elements on the final substrate to the        wirings.

Further, according to still another aspect of the present invention,there is provided an intermediate transfer substrate, comprising:

-   -   a substrate having an element region and a peripheral region        surrounding the element region;    -   a peeling layer formed on the substrate;    -   a plurality of active elements formed apart from each other on        the peeling layer on the element region; and    -   a spacer layer formed in the peripheral region on the substrate.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a plan view schematically showing the construction of anactive matrix substrate according to a first embodiment of the presentinvention;

FIG. 2 is a cross sectional view for describing the manufacturing methodof the active matrix substrate shown in FIG. 1;

FIG. 3 is a cross sectional view for describing the manufacturing methodof the active matrix substrate shown in FIG. 1;

FIG. 4 is a cross sectional view for describing the manufacturing methodof the active matrix substrate shown in FIG. 1;

FIG. 5 is a cross sectional view for describing the manufacturing methodof the active matrix substrate shown in FIG. 1;

FIG. 6 is a cross sectional view for describing the manufacturing methodof the active matrix substrate shown in FIG. 1;

FIG. 7 is a cross sectional view for describing the manufacturing methodof the active matrix substrate shown in FIG. 1;

FIG. 8 is a plan view for describing the manufacturing method of theactive matrix substrate shown in FIG. 1;

FIG. 9 is a plan view showing the active elements included in the activematrix substrate shown in FIG. 1;

FIG. 10 is a plan view showing the active elements included in theactive matrix substrate shown in FIG. 1;

FIG. 11 is a cross sectional view for describing the manufacturingmethod of the active matrix substrate shown in FIG. 1;

FIG. 12 is a cross sectional view for describing the manufacturingmethod of the active matrix substrate shown in FIG. 1;

FIG. 13 is a cross sectional view schematically showing the constructionof the active matrix element formed on the active matrix substrate shownin FIG. 1;

FIG. 14 is a plan view schematically showing the positional relationshipbetween a provisional adhesive layer and a spacer layer in the activematrix substrate according to a modification of the present invention;

FIG. 15 is a plan view schematically showing the positional relationshipbetween a provisional adhesive layer and a spacer layer in the activematrix substrate according to another modification of the presentinvention;

FIG. 16 is a plan view schematically showing the positional relationshipbetween a provisional adhesive layer and a spacer layer in the activematrix substrate according to another modification of the presentinvention;

FIG. 17 is a plan view schematically showing the positional relationshipbetween a provisional adhesive layer and a spacer layer in the activematrix substrate according to another modification of the presentinvention;

FIG. 18 is a plan view schematically showing the positional relationshipbetween a provisional adhesive layer and a spacer layer in the activematrix substrate according to another modification of the presentinvention;

FIG. 19 is a cross sectional view for describing the manufacturingmethod of an active matrix substrate according to another modificationof the present invention; and

FIG. 20 is a cross sectional view for describing the manufacturingmethod of an active matrix substrate according to still anothermodification of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

An active matrix substrate according to an embodiment of the presentinvention and a method of manufacturing the same will now be describedwith reference to the accompanying drawings.

Before describing the active matrix substrate of the present invention,the situation under which the present inventors have arrived at thepresent invention will now be described briefly.

In the manufacture of an active matrix substrate, an active element isformed first on a element form ation substrate, followed by transferringthe active element from the element formation substrate onto anintermediate transfer substrate and subsequently transferringselectively the active element from the intermediate transfer substrateonto a final substrate. The present inventors have looked into theselectivity of the transfer in selectively transferring the activeelement in the process of manufacturing the active matrix substrate.

It has been clarified that, in the final substrate, the transferselectivity is high in the region into which the active element is to betransferred and in the region in which the pixel electrode is to beformed, particularly, in the region including the central portion of thepixel region. On the other hand, it has been clarified that, in thefinal substrate, the transfer selectivity within the pixel region islowered as the transfer region approaches the peripheral region ontowhich the active element is not transferred from the central portion ofthe pixel region, the peripheral region being formed to surround thepixel region. Particularly, it has been clarified that a first typedefective transfer is generated more frequently than a second typedefective transfer, as the transfer region approaches the peripheralregion in the final substrate, compared with the case where the transferregion is in the central region of the pixel region. Incidentally, thefirst type defective transfer noted above denotes that the activeelement that should not be transferred is transferred. On the otherhand, the second type defective transfer denotes that the active elementthat should be transferred is not transferred. It is consideredreasonable to understand that the defective transfer is generatedbecause an adhesive layer for bonding the active element is not includedin the peripheral region of the final substrate and, thus, the spacereffect produced by the adhesive layer is lowered. In other words, whenthe active element is transferred from the intermediate transfersubstrate onto the final substrate, the pressure for pushing the activeelement against the intermediate transfer substrate is applied morestrongly to the active element in the peripheral region than in thepixel region of the final substrate. It follows that the active elementon the intermediate transfer substrate is brought into contact moreeasily with the final substrate, with the result that the unselectedactive element in the pixel region or the active element in theperipheral region of the intermediate transfer substrate is alsotransferred onto the final substrate. Such being the situation, theyield in the manufacture of the active matrix substrate is lowered so asto increase the manufacturing cost.

Under the circumstances, in the manufacturing process of the activematrix substrate according to the present invention, a space layer isformed in the peripheral region of the intermediate transfer substrateor in the peripheral region of the final substrate so as to permit asubstantially uniform pressure to be applied to the active element. Inthis fashion, it is possible in the present invention to prevent thedefective transfer that the active element that should not betransferred is transferred.

The active matrix substrate according to a first embodiment of thepresent invention will now be described with reference to FIG. 1. Theactive matrix substrate shown in FIG. 1 corresponds to a final substrate11. As shown in the drawing, a spacer layer 16 is formed in a peripheralregion 13 of the substrate 11.

The active matrix substrate, i.e., final substrate) 11 has a surfacethat is partitioned into a pixel region 12 including the central portionof the substrate 11 and expanded to cover the periphery of the centralregion, and the peripheral region 13 formed to surround the pixel region12. A plurality of adhesive layers 14 are arranged to form a matrix inthe pixel region 12 on the active matrix substrate 11, and an activeelement 15 is formed on each of the adhesive layers 14. Also, the spacerlayers 16 are formed in the peripheral region 13 on the active matrixsubstrate 11 such that the adhesive layers 14 and the spacer layers 16are arranged to form a matrix including a plurality of rows and aplurality of columns on the active matrix substrate 11. The adhesivelayers 14 are sized substantially equal to or slightly larger than theactive elements 15, and the spacers 16 are sized substantially equal tothe adhesive layers 14.

As described above, the spacer layers 16 are formed in the presentinvention in the peripheral region 13 on the active matrix substrate 11so as to prevent the defective transfer that the active element 15 istransferred onto a non-transfer section. To be more specific, in theprocess of allowing an intermediate transfer substrate (not shown),which is described herein later, to be pushed against the active matrixsubstrate 11 for transferring the active element 15 onto the activematrix substrate 11, the spacer layers 16 permit the pressuresubstantially equal to the pressure applied to the central portion ofthe pixel region 2 to be applied between the active matrix substrate 11and the intermediate transfer substrate even in the edge portion of thepixel region 12.

It should also be noted that, in the active matrix substrate 11 shown inFIG. 1, the pitches in the X- and Y-directions of the adhesive layers14, the pitches in the X- and Y-directions of the spacer layers 16, andthe distance between the adhesive layer 14 and the spacer layer 16 aredefined to be 1 x(0)=1 x(1)=1 x(2) and 1 y(0)=1 y(1)=1 y(2), where 1x(0) and 1 y(0) denote the pitches of the adhesive layers 14 in thepixel region 12 in the X-direction (row direction) and the Y-direction(column direction), respectively, 1 x(2) and 1 y(2) denote the pitchesof the spacer layers 16 in the peripheral region 13 in the X- andY-directions, respectively, and the 1 x(1) and 1 y(1) denote thedistances between the adhesive layer 14 and the spacer layer 16 in theX- and Y-directions, respectively. In other words, the adhesive layers14 and the spacer layers 16 are arranged in the same period in the pixelregion 12 and the peripheral region 13. Where the adhesive layers 14 andthe spacer layers 16 are arranged at the same pitch as pointed outabove, it is possible to allow the pressures applied to the pixel region12 and the peripheral region 13 to be substantially equal to each other.Also, in the particular arrangement, the spacer layers 16 can be formedsimultaneously with formation of, for example, the adhesive layers 14.

Concerning the spacer pitch, it suffices for the conditions of 1 x(2)≦1x(0) and 1 y(2)≦1 y(0) to be satisfied even if the adhesive layers 14and the spacer layers 16 are not arranged at the same pitch. If theconditions given above are satisfied, it is possible for the activeelements 15 to be transferred successively in any order.

As shown in FIG. 1, a provisional adhesive layer for allowing the activematrix substrate 11 to be provisionally bonded to an intermediatetransfer substrate (not shown) is formed in the intermediate transfersubstrate in the range denoted by a reference numeral 17. It isdesirable for the distance 1 y(3) between the inner peripheral edge ofthe range 17 of the provisional adhesive layer and the edge of thespacer layer 16 to be set larger than the pitch 1 y(0) of the adhesivelayers 14 in the Y-direction. If the distance 1 y(3) is set larger thanthe pitch 1 y(0), the spacer layer 16 is brought into contact with theprovisional adhesive layer 17 when the active elements 15 are repeatedlytransferred successively. As a result, the effect produced by the spacerlayers 16 for allowing the distribution of the applied pressure to beuniform without fail is increased so as to prevent the defectivetransfer of the active elements 15.

The manufacturing method of a liquid crystal display device comprisingthe active matrix substrate shown in FIG. 1 will now be described withreference to FIGS. 2 to 11.

In the first step, prepared is an element formation substrate 201 formedof a glass substrate having a high resistance to heat. An undercoatlayer 202 made of, for example, a SiO_(x) film or a SiN_(x) film isformed on the element formation substrate 201 in a thickness of about200 nm to 1 μm. Then, the undercoat layer 202 is selectively removed soas to form a plurality of undercoat layers 202 in the form of islands onthe element formation substrate 201 as shown in FIG. 2. A thin filmtransistor 15 is formed on the surface of each of the island-likeundercoat layers 202. Further, a protective layer 203 made of, forexample, a photosensitive polyimide resin is formed to cover the thinfilm transistor 15 and the undercoat layer 202. Similarly, theprotective layer 203 is selectively removed such that the thin filmtransistor 15 is covered with the undercoat layer 202 and the protectivefilm 203. In this fashion, the thin film transistor 15 is left on theundercoat layer 202.

Incidentally, the thin film transistor 15 will be described later indetail. In the following description, the combination of the thin filmtransistor 15, the undercoat layer 202 and the protective film 203 iscalled an active element 100.

In the next step, prepared is an intermediate transfer substrate 204onto which all the active elements 100 formed on the element formationsubstrate 201 are temporarily transferred, as shown in FIG. 3. A peelinglayer 205 is formed on the intermediate transfer substrate 204. Thepeeling layer 205 is formed of a UV peeling resin that is peeled uponirradiation with an ultraviolet light, “Liva-alpha” (trade name of aresin manufactured by Nitto Denko K.K., which is foamed upon heating soas to lower the adhesivity), or “Intellimer” (trade name of a resinmanufactured by K.K. Nitta, the adhesion of which is changed byutilizing the phase transfer phenomenon in the non-crystalline state).By the adhesion of the peeling layer 205, the protective layer 203wrapping the active element 100 on the element formation substrate 201is bonded to the intermediate transfer substrate 204.

In the next step, the element formation substrate 201 is removed asdenoted by a dotted line in FIG. 4. For removing the element formationsubstrate 201, it is possible to employ a wet etching method that uses achemical material such as hydrofluoric acid. It is also possible toemploy a chemical mechanical polishing method in which the elementformation substrate 201 is mechanically polished while dipping thesubstrate 201 in a chemical solution. Also, in place of removing theelement formation substrate 201 itself, it is possible to form, forexample, a hydrogenated amorphous silicon layer between the undercoatlayer 202 and the element formation substrate 201. In this case, theamorphous silicon layer is abraded by means of a laser beam irradiationso as to peel the element formation substrate 201 while leaving theactive element 100 etc. unremoved on the side of the intermediatetransfer substrate 204. By this process, the active elements 100 areindependently bonded provisionally to the intermediate transfersubstrate 204.

Further, as shown in FIG. 5, prepared is a final substrate 11 onto whichthe active elements 100 are selectively transferred from theintermediate transfer substrate 204 to which the active elements 100 arebonded provisionally. It is possible for the final substrate 11 to beformed of a plastic substrate made of, for example, polyether etherketone (PEEK), polyethylene naphthalate (PEN), polyether sulfone (PES)or polyimide (PI). It is also possible to use a flexible substrate asthe final substrate 11. In the case of using a flexible substrate, it ispossible to achieve a display device that can be bent or folded like apaper sheet. Further, it is apparently possible to use a substrate thatis not flexible such as a glass substrate or a silicon substrate as thefinal substrate 11.

The spacer layers 16 are formed by using an acrylic resin in a thicknessof 0.5 μm to 10 μm in the peripheral region on the final substrate 11.Also, the adhesive layers 14 are formed by using an acrylic resin in athickness of about 1 μm to 5 μm in that region on the final substrate 11into which the active elements are to be transferred. Incidentally, inthis embodiment, the adhesive layers 14 and the spacer layers 16 arearranged in the planar pattern shown in FIG. 1.

It is possible for the spacer layer 16 to be formed of an organic resinsuch as an acrylic resin or a polyimide series resin or an inorganicmaterial such as SiO_(x). The acrylic resin is excellent in adhesivity,transparent, excellent in flexibility, and is unlikely to be cracked.Therefore, it is particularly desirable to use the acrylic resin forforming the spacer layer 16. In the case of using a photosensitiveorganic resin for forming the spacer layer 16, the spacer layer 16 canbe patterned easily so as to make it possible to lower the manufacturingcost, compared with the use of a resin that is not photosensitive. Ofcourse, the spacer layer 16 can be patterned by means of etching orprinting even if the spacer layer 16 is formed of a resin that is notphotosensitive.

Suppose N×M active elements 100 are arranged at a high density on theelement formation substrate 201, all of these active elements 100 aretransferred in the same pattern onto the intermediate transfer substrate204, and the active elements 100 on the intermediate transfer substrate204 are transferred onto a single final substrate 11 such that all theactive elements 100 are distributed on four final substrates 11. Sincethe active elements on the element formation substrate 201 and theintermediate transfer substrate 204 are distributed onto the four finalsubstrate 11, N/2×M/2 active elements 100 are selectively transferredfrom the intermediate transfer substrate 204 onto each of the four finalsubstrates 11.

The adhesive layer 14 performs the function of selectively transferringthe active elements 100 from the intermediate transfer substrate 204onto the final substrate 11. To be more specific, since the adhesivelayers 14 are arranged at a prescribed arranging pattern on the finalsubstrate 11, the active elements 100 provisionally bonded to theintermediate transfer substrate 204 are classified into a selected groupof the active elements 100 that are in contact with the adhesive layers14 and a non-selected group of the active elements 100 that are not incontact with the adhesive layers 14. The active elements in the selectedgroup are peeled off from the intermediate transfer substrate 204 so asto be provisionally bonded to the final substrate 11, and the activeelements in the non-selected group are left to be held by theintermediate transfer substrate 204. The final substrate 11 isconstructed to permit the adhesive layers 14 to be formed in the finalsubstrate 11 in an arrangement corresponding to the arrangement of theactive elements 100 in the selected group and to permit the adhesivelayers 14 not to be formed in that region on the final substrate 11which corresponds to the arranging positions of the active elements inthe non-selected group.

It is possible to use, for example, an acrylic resin or a polyimideseries resin for forming the adhesive layer 14. In the case of using theresin exemplified above, the adhesive layer 14 is not denatured evenunder a high temperature state of about 200° C. to 300° C. in theprocess of forming a wiring or the process of forming a passivationfilm, which are described herein later. Particularly, it is desirable touse an acrylic resin for forming the adhesive layer 14 because theacrylic resin is excellent in adhesivity, transparent, excellent inflexibility, and is unlikely to be cracked. Also, in the case ofmanufacturing a transmission type liquid crystal display device, use ofthe acrylic resin for forming the adhesive layer 14 is advantageous interms of the light efficiency because the acrylic resin exhibits a hightransmittance of a visible light. It is possible to disperse fineparticles of a metal such as Cr in the adhesive layer 14 or to use ablack resist for forming the adhesive layer 14. If the adhesive layer 14is blackened or rendered opaque, it is possible to suppress the lightleakage into the active element transferred onto the adhesive layer 14so as to improve the switching ratio of the transistor. As a result, theimage quality of the display device that is finally formed is improved.If a photosensitive organic resin is used for forming the adhesive layer14, the organic resin layer can be patterned easily into the adhesivelayer 14. Also, in the case of using an organic resin, the manufacturingcost can be lowered, compared with the case of using a resin that is notphotosensitive. Of course, in the case of using an organic resin that isnot photosensitive, the resin layer can be patterned by means of, forexample, etching or printing.

It is possible to form the spacer layers 16 and the adhesive layers 14in the same process by using the same material, though the spacer layers16 are formed to have a height larger than that of the adhesive layers14. As shown in FIG. 5, the spacer layer 16 is formed in a height equalto the sum of the thickness of the adhesive layer 14 and the height ofthe active element 100 that is to be transferred onto the adhesive layer14. If the spacer layers 16 and the adhesive layers 14 can be formedsimultaneously, the number of process steps is decreased so as to lowerthe manufacturing cost of the active matrix substrate.

Incidentally, if a fluorination treatment such as a CF₄ plasmaprocessing is applied selectively to the surfaces of the spacers 16after formation of the spacer layers 16 with the region other than theperipheral region 13 masked with, for example, a resist pattern, it ispossible to obtain the effect of suppressing the transfer of the activeelements 100 onto the spacer layers 16 even if the active elements 100are brought into contact with the spacer layers 16. Likewise, if afluorination treatment such as a CF₄ plasma processing is applied to thesurface of the pixel region 12 after formation of the adhesive layers 14with the adhesive layers 14 masked with, for example, a resist, thepeeling capability is promoted in the region other than the adhesivelayers 14 so as to obtain the effect that the active elements 100 areunlikely to be transferred into the non-selected section.

In the next step, the intermediate transfer substrate 204 is alignedwith the final substrate 11 such that the active elements 100 that areto be transferred are brought into contact with the adhesive layers 14,followed by bonding the active elements 100 to the adhesive layers 14,as shown in FIG. 6. For performing the bonding, it is possible to use abonding device including two flat plates that are arranged in parallelor in substantially parallel. In this case, the objects to be bonded areheld between the two flat plates so as to permit the objects, which areto be bonded, to be pushed against the two flat plates. It is alsopossible to use a bonding device including a flat plate and a singleroller arranged on the flat plate. In this case, the objects to bebonded are rolled by the roller on the flat plate so as to achieve thedesired bonding. Further, it is also possible to achieve the desiredbonding by using a contact bonding device formed of two rollers. In thebonding device exemplified above, the objects to be bonded are heatedunder a pressurized state and, then, cooled to room temperature. In thisembodiment of the present invention, the active elements 100 bonded tothe adhesive layers 14 are arranged in the pixel region 12, and thespacer layers 16 are formed in the peripheral region 13. As a result, asubstantially uniform pressure is applied to the pixel region 12 and theperipheral region 13.

In the next step, the intermediate transfer substrate 204 and the finalsubstrate 11, which are kept bonded, are removed from the bondingdevice, followed by applying a treatment for promoting the peeling tothe peeling layer 205, as shown in FIG. 7. In this embodiment, used isthe adhesive peeling layer 205 that can be peeled off by the heatingand, thus, a heat treatment is applied to the peeling layer 205 so as topeel off the active element 100 from the peeling layer 205. For example,in the case of using the peeling layer 205 that is peeled off uponirradiation with an ultraviolet light, it suffices to irradiate thepeeling layer 205 with an ultraviolet light so as to permit the activeelement 100 to be peeled off from the peeling layer 205. Particularly,selectivity of the transfer can be improved by applying a heat treatmentor an ultraviolet light irradiation to only that region whichcorresponds to the active element 100 that is to be transferred. Byapplying the particular peeling treatment, the adhesive force of thepeeling layer 205 formed on the intermediate transfer substrate 204 islowered, and the active element 100 in contact with the adhesive layer14 is thermally bonded by the contact bonding to the adhesive layer 14,with the result that the active element 100 can be selectivelytransferred onto the adhesive layer 14. Incidentally, the active matrixsubstrate 11 shown in FIG. 7 corresponds to the cross section along theline VII-VII shown in FIG. 1.

It is possible to form a plurality of active matrix substrates 11 from asingle intermediate transfer substrate 204 having the active elements100 formed thereon at a high density by repeating the selective transferprocess described above a plurality of times. As a result, it ispossible to lower the manufacturing cost of the active matrix substrate.It is also possible to form the active matrix substrate 11 sized largerthan the intermediate transfer substrate 204 by performing the transferoperation from the intermediate transfer substrate 204 a plurality oftimes. In other words, it is possible to form an active matrix substratefor a large display device from a small substrate so as to make itpossible to miniaturize the manufacturing apparatus of the activeelements.

FIGS. 8 and 9 collectively exemplify the case where the active element100 is transferred from a small intermediate transfer substrate 204 ontoa large final substrate 11 by repeating the transfer of the activeelement 100. As shown in FIG. 8, the active elements 100 are arranged toform a matrix having rows N and columns M in the central region of theintermediate transfer substrate 204. Also, the adhesive layers 16 arearranged at a prescribed pitch in a manner to form rows and columns inthe pixel region 12 of the final substrate 11. The pitch of the adhesivelayers 16 is set integer number times as large as the pitch of theactive elements 100 on the intermediate transfer substrate 204. Itfollows that, after the active elements 100 are transferred from theintermediate transfer substrate 204 onto the final substrate 11, aprescribed active element 100 can be aligned with the adhesive layer 16on the final substrate 11 by shifting the intermediate transfersubstrate 204 in an amount corresponding to the pitch of the activeelements 100 on the intermediate transfer substrate 204.

Also, the intermediate transfer substrate 204 is aligned with the finalsubstrate 11 such that the prescribed active element 100 is allowed toface the adhesive layer 16 in the transfer region, as shown in FIG. 8.In this case, the peripheral portion of the intermediate transfersubstrate 204 is allowed to face the spacer 16 of the final substrate11. If the intermediate transfer substrate 204 is pushed against thefinal substrate 11 under the particular state, a prescribed activeelement 100 is pushed against the adhesive layer 16 under the state thatthe spacer 16 abuts against the peripheral portion of the intermediatetransfer substrate 204, with the result that the prescribed activeelement 100 is transferred onto the final substrate 11. It follows that,in the example shown in FIG. 8, the prescribed active element 100 istransferred onto 3×4 adhesive layers 16.

In the next step, the intermediate transfer substrate 204 is separatedfrom the final substrate 11 and moved by a prescribed distance so as topermit the intermediate transfer substrate 204 to be aligned with thefinal substrate 11 such that a prescribed active element 100, which isnewly selected, is allowed to face a new adhesive layer 16 in thetransfer region. In this stage, the peripheral portion of theintermediate transfer substrate 204 is allowed to face the spacer 16 ofthe final substrate 11 and the active element 100 that has been alreadytransferred. If the intermediate transfer substrate 204 is pushedagainst the final substrate 11 under this state, a prescribed activeelement 100, which is newly selected, is pushed against the adhesivelayer 16 under the state that the spacer 16 and the prescribed activeelement 100, which is newly selected, are pushed against the adhesivelayer 16. As a result, the prescribed active element 100 is transferredonto the final substrate 11. It follows that the prescribed activeelement 100 is transferred onto 3×4 adhesive layers 16. The transferprocess described above is repeated so as to permit the active element100 to be transferred onto all of the final substrates 11.

In the example shown in FIGS. 8 and 9, six active elements are arrangedto form a row in the intermediate transfer substrate 204. It followsthat it is possible to transfer the active element 100 from a singleintermediate transfer substrate 204 into the pixel region 12 having anarea 6 times as large as the area of the intermediate transfer substrate204. In the transfer in the edge portion of the screen, it is possibleto prevent the defective transfer in the edge portion of the screen bythe arrangement that the edge portion of the intermediate transfersubstrate 204 overlaps with the spacer layer 16.

In the example shown in FIGS. 8 and 9, the intermediate transfersubstrate 204 is sufficiently smaller than the final substrate 11, andall the active elements 100 can be transferred onto the final substrate11 by a plurality of transfer operations. However, it is possible forthe active element 100 to be transferred from the intermediate transfersubstrate 204 onto all the adhesive layers of the final substrate 11 bya single transfer operation, as shown in FIG. 10. To be more specific,the pixel region 12 of the final substrate 11 is substantially equal tothe area of the active element-forming region on the intermediatetransfer substrate 204 as shown in FIG. 10, and the active element 100is transferred from the single intermediate transfer substrate 204 ontoa single final substrate 11 having a screen region of substantially thesame area. Since the active element that is six times as large as theadhesive layer 16 formed in the final substrate 11 is arranged in theintermediate transfer substrate 204, it is possible to transfer theactive element from the single intermediate transfer substrate onto thesix final substrates each having a screen region substantially equal tothe area of the element region.

As shown in FIG. 11, an organic film layer made of a photosensitivepolyimide is formed as a first flattening layer 206 in a thickness ofabout 5 to 10 μm on the active matrix substrate 11 having the activeelement 100 transferred thereonto. Then, the photosensitive polyimidelayer is irradiated with an ultraviolet light so as to expose thephotosensitive polyimide layer to the ultraviolet light in a prescribedpattern for the etching purpose. By this etching treatment,through-holes are formed on the gate electrode, the source electrode andthe drain electrode of the active element 100. After formation of thethrough-holes, a gate wiring (not shown) is formed by using a metal filmsuch as a Mo film or an Al film, with the result that the gate electrode(not shown) of the thin film transistor is connected to an electrodewiring (not shown) via a gate line extending through the through-hole.Further, a second flattening film 207 made of a photosensitive polyimideis formed in a thickness of about 1 to 2 μm. The second flattening film207 is irradiated with an ultraviolet light so as to cause the secondflattening film 207 to be exposed to the ultraviolet light in aprescribed pattern for the etching purpose. By this etching treatment,through-holes are formed similarly on a source electrode (not shown) anda drain electrode (not shown). Then, a metal film such as an Al film isformed so as to form a signal line (not shown) and a pixel electrode208. The signal line is connected to the source electrode of the thinfilm transistor via the through-hole, and the pixel electrode 208 isconnected to the drain electrode of the thin film transistor via thethrough-hole. It follows that, in the structure shown in FIG. 13, thewiring is formed on the flattening film and, thus, the wiring is notbroken even if the wiring extends though a region above the spacer layer16. It should be noted in this connection that, even where the thicknessof the flattening film is decreased, it is possible to prevent thebreakage of the wiring by allowing at least a part of the wiring toextend through a region in which the spacer layer 16 is not formed.

Finally, prepared is a transparent counter substrate including a counterelectrode layer made of a transparent conductive film such as an ITOfilm (not shown), a black matrix layer (not shown) and a color filterlayer (not shown). The counter substrate is bonded to the finalsubstrate with a gap of several microns provided therebetween by using aspacer. The periphery of the bonded structure is sealed with a sealantand, then, a liquid crystal is injected into the clearance between thebonded substrates. It is desirable for the liquid crystal injected intothe clearance between the bonded substrates to be a twisted nematic typeliquid crystal. However, it is also possible to use another liquidcrystal such as a host-gust type liquid crystal, a cholesteric liquidcrystal, or a ferroelectric liquid crystal. A liquid crystal displaycell having an active element is formed through the processes describedabove. The gate line, the signal line and the counter electrode areconnected to a driving circuit so as to finish the manufacture of aliquid crystal display device.

As described above, the intermediate transfer substrate 204 and thefinal substrate 11 are held apart from each other by the spacers 16 and,thus, the active element 100 is unlikely to be erroneously transferredinto the non-selected portion in the transfer stage of the activeelement 100 from the intermediate transfer substrate 204 onto the finalsubstrate 11. The particular effect can be obtained because the spacerlayers 16 serve to prevent the active element 100 in the non-transferportion from being brought into contact with the final substrate 11.Also, even if the active element 100 in the non-transfer portion shouldbe in contact with the final substrate 11, the spacer layers 16 permitlowering the contact pressure so as to lower the probability for theactive element 100 to be erroneously transferred onto the non-transferportion.

It should also be noted that, even in the bonding step of the activeelement 100 to the adhesive layer 14, the contact bonding pressure isconcentrated on the adhesive layer 14 through the active element 100 inthe pixel region 12 positioned close to the peripheral region 13, withthe result that the adhesive layer 14 is collapsed. Also, the problemthat the active element 100 itself is collapsed is generated in somecases, and an additional problem is generated that the nonuniformity inthe height of the active element 100 from the surface of the finalsubstrate 11 is increased after the transfer operation. In the case offorming the spacer layers 16, however, the distance between theintermediate transfer substrate 204 and the final substrate 11 ismaintained constant within a plane during the contact bonding process soas to decrease the nonuniformity in the height of the active element 100after the transfer operation. It follows that the damage done to theactive element 100 can be lowered.

It is desirable for the thickness of the spacer layer 16 to besubstantially equal to or larger than the sum of the thickness of theadhesive layer 14 and the thickness of the active element 100. In thiscase, the defective transfer can be further suppressed.

In the embodiment described above, the spacer layers 16 are arranged toface the peeling layer 205 acting as a provisional adhesive layer.However, it is also possible for the spacer layer 16 to be arranged toface the substrate 204, not the peeling layer 205 acting as aprovisional adhesive layer, such that the spacer layer 16 is in directcontact with the substrate 204, as shown in FIG. 12. Where the spacerlayer 16 is arranged in that region of the substrate 11 which is notpositioned to face the peeling layer 205 as shown in FIG. 12, it isdesirable for the thickness of the spacer layer 16 to be equal to orlarger than the sum of the thickness of the active element 100, thethickness of the adhesive layer 14 and the thickness of the provisionaladhesive layer 205.

The construction of the active element 100 according to this embodimentof the present invention will now be described with reference to FIG.13.

As shown in FIG. 13, the active element 100 comprises the undercoatlayer 202 separated for each of the thin film transistors formed on theelement formation substrate 201, a thin film transistor formed on theundercoat layer 202, and the protective layer 203 covering the thin filmtransistor together with the undercoat layer 202. The thin filmtransistor comprises a gate electrode 301 patterned on the undercoatlayer 202, a gate insulating film 302 covering the gate electrode 301,and a channel layer 303 formed on the gate insulating film 302. Also, apatterned channel protective film 304 is formed on the channel layer303, and two separated n-type semiconductor layers 305 are formed on thechannel protective film 304. Further, a source electrode 306 and a drainelectrode 307 are formed to cover, respectively, the two n-typesemiconductor layers 305.

The method of manufacturing the active element 100 shown in FIG. 13 willnow be described.

In the first step, the undercoat layer 202 is formed in a thickness ofabout 200 nm to 1 μm on the element formation substrate 201 formed of aglass substrate having a high resistance to heat. It is desirable forthe undercoat layer 202 to be formed of, for example, a SiO_(x) film ora SiN_(x) film in view of the blocking effect for preventing the ionicimpurities from migrating into the thin film transistor. Also, theblocking effect can be further increased in the case of using a laminatestructure of, for example, a SiO_(x) film and a SiN_(x) film as theundercoat layer 202.

In the next step, a metal such as MoTa or MoW is deposited in athickness of about 300 nm by, for example, a sputtering method so as toform a metal thin film. The metal thin film thus formed is patterned soas to form the gate electrode 301. Then, the gate insulating film madeof, for example, SiO_(x) or SiN_(x), the channel layer 303 formed of asemiconductor material such as amorphous silicon, and an insulating filmsuch as a SiN_(x) film are deposited successively by, for example, aplasma CVD method. The film having a large dielectric constant thusdeposited is patterned so as to form the channel protective layer 304.It is desirable to form the gate insulating film 302, the channel layer303 and the channel protective layer 304 in a thickness of about 100 nmto 400 nm, about 50 nm to 300 nm and about 50 nm to 200 nm,respectively. Incidentally, it is possible for the SiN_(x) film used asthe gate insulating film 302 to be replaced by a film of a materialhaving a large dielectric constant such as a TaO_(x) film or a PZT filmor by a ferroelectric film. The film having a large dielectric constantor the ferroelectric film has a large dielectric constant so as to makeit possible to further decrease the thickness of the gate insulatingfilm 302. It follows that it is possible to obtain the effect oflowering the cost for forming the gate insulating film 302. Further, inthe case of using a ferroelectric film, the memory-like driving can beachieved so as to lower the driving power.

In the next step, the n-type semiconductor layer 305 doped withphosphorus is formed in a thickness of about 30 nm to 100 nm by, forexample, a plasma CVD method in a manner to cover the channel layer 303and the channel protective layer 304. Then, the laminate structureincluding the gate insulating film 302 and the n-type semiconductorlayer 305 is patterned so as to form an island-shaped pattern. Further,a single layer of, for example, Mo or Al or a laminate structure formedof a Mo layer and an Al layer is formed on the island-shaped pattern by,for example, a sputtering method in a thickness of about 200 nm to 400nm. Then, the electrode layer and the n-type semiconductor layer 305 areetched by a wet etching method or a dry etching method, with the resultthat the electrode layer is formed into the source electrode 306 and thedrain electrode 306. In this stage, the channel protective layer 304acts as an etching stopper and, thus, the channel layer 303 does notincur an etching damage.

In the next step, the undercoat layer 202 and the thin film transistorstructure describe above are coated with a photosensitive polyimideresin and, then, the polyimide resin layer is selectively exposed to anultraviolet light in a mask pattern so as to form the protective layer203 in a thickness of about 2 μm to 10 μm. Further, the undercoat layer202 is etched with the patterned protective film 203 used as a mask. Asa result, formed is the active element 100 in which the protective layer203 covers the individual thin film transistor structures, and the thinfilm transistor structures are separated from each other.

In the process described above, a thin film transistor is formed on aglass substrate having a high resistance to heat as in the liquidcrystal display device widely used nowadays. Such being the situation,it is possible to form the thin film transistor by the high temperatureprocess as in the prior art. It follows that the thin film transistorprepared by the process described above is allowed to exhibit theelectric characteristics substantially equal to those of theconventional thin film transistor. Further, since many final substratesare formed on the basis of the element formation substrate having theactive elements formed thereon at a high density, the thin filmtransistors are arranged on the element formation substrate and theintermediate transfer substrate at a pitch finer than that in the finalsubstrate.

Incidentally, in the embodiment described above, a reverse stagger typeamorphous silicon TFT is used as the active element. However, it is alsopossible to use a thin film transistor of another type such as apolysilicon TFT. Also, it is possible to use any element such as a thinfilm diode or a thin film capacitor as the active element. In the caseof manufacturing, for example, an organic EL display device, it ispossible to combine a plurality of thin film transistors so as to formthe active element.

Incidentally, in this embodiment of the present invention, the pitches 1x(0) and 1 y(0) of the adhesive layers 14 in the pixel region 12, thepitches 1 x(2) and 1 y(2) of the spacer layers 16 in the peripheralregion 13, and the distances 1 x(1) and 1 y(1) between the adhesivelayer 14 and the spacer layer 16 are made equal to each other, as shownin FIG. 1. Also, the adhesive layers 14 and the spacer layers 16 arearranged at the same period (1 x(0)=1 x(1)=1 x(2) and 1 y(0)=1 y(1)=1y(2)). The spacer layers 16 provided by the formed dummy adhesive layersare arranged to form a matrix having two rows in the X-direction and twocolumns in the Y-direction. For example, even where the spacer layers 16are formed to have a single row and a single column at the period equalto that of the adhesive layers 14, the spacer layers 16 are effectivefor suppressing the defective transfer. With increase in the number ofspacer layers 16, a ratio of the area of the pixel region to the entirearea is lowered. However, the defective transfer within the pixel region12 tends to be lowered. In order to suppress the defective transfer andto improve the area ratio of the pixel region, it is desirable for thespacer layers 16 to be arranged to form a matrix having about 3 to 4rows and about 9 to 12 columns in the case of a TFT array in the screenhaving a diagonal length of 3.2 inches because it is possible in thiscase to prevent substantially the defective transfer within the screen.The width of the spacer region is about 1.0 mm to 1.5 mm in each of therow direction and the column direction. It is desirable for the ratio ofthe spacer region to the diagonal length of the screen to be about 1 to2% because, in this case, it is possible to prevent substantially thedefective transfer.

Incidentally, it is possible for the pitches 1 x(0) and 1 y(0) of theadhesive layers 14 in the pixel region 12, the pitches 1 x(2) and 1 y(2)of the spacer layers 16 in the peripheral region 13 and the distances 1x(1) and 1 y(1) between the adhesive layer 14 and the spacer layer 16not to be equal to each other. It should be noted, however, that, whenthe active element 100 is transferred from the single intermediatetransfer substrate 204 onto a plurality of final substrates 11, it isnecessary to satisfy the conditions of 1 x(1)≧1 x(0) and 1 y(1)≧1 y(0)in order to prevent the defective transfer that the active element 100is brought into contact with the spacer layer 16 so as to be transferredonto the spacer layer 16.

Where the adhesive layers 14 and the spacer layers are not arranged atthe same period as described above, it is possible for the spacer layerto be formed like a stripe or to be formed rectangular, as shown in FIG.14. In FIG. 14, arranged are three kinds of spacer layers including afirst spacer layer 401 shaped like a stripe, a second spacer layer 402shaped like a stripe, and a third spacer layer 403 that is shapedrectangular. If the conditions of 1 x(0)≧1 x(1) and 1 y(0)≧1 y(1) aresatisfied in the arrangement shown in FIG. 14, it is possible to preventthe active element 100 from being brought into contact with the spacerlayers 401, 402 and 403 even if the active element 100 formed on asingle intermediate transfer substrate 204 is transferred onto aplurality of final substrates 11. Where the spacer layers 401, 402 and403 are shaped like a stripe or formed rectangular, the area occupied bythe spacer layers 401, 402 and 403 per unit area is larger than that inthe case where the spacer layers are formed in the form of islands asshown in FIG. 1. It follows that the effect of moderating the pressurecan be enhanced. Also, since it is possible to allow the wiring toextend through the clearances among the rod-like spacer layers 401, 402,403, the breakage of the wiring can be prevented. It follows that it ispossible to decrease the width of the spacer layer, i.e., the width in adirection perpendicular to the Y-direction in the case of the firstspacer 401, or the width in the Y-direction in the case of the secondspacer 402. To be more specific, it is possible to prevent the defectivetransfer of the TFT by setting the width of the spacer layer at about0.2 mm to 0.7 mm in the TFT array of 3.2 inches. The arrangement shownin FIG. 14 is excellent in its effect of moderating the pressureconcentration in the vicinity of the peripheral region and, thus,permits diminishing the regions for forming the spacer layers 401, 402,403 that are required for bringing about the pressure moderating effect.In the case of arranging stripe-shaped spacer layers, a desired effectcan be obtained by only the first spacer layer 401 and the second spacerlayer 402. However, the defective transfer can be further suppressed in,particularly, the corner portions each having a high contact pressure byarranging the rectangular or stripe-shaped third spacer layers 403 atthe four corners of the screen.

It is desirable for the distance 1 y(3) between the provisional adhesivelayer 17 and the edge of the spacer layer on the intermediate transfersubstrate to be set larger than 1 y(0) as shown in FIG. 14. In thiscase, the active elements are successively transferred while allowingthe intermediate transfer substrate to deviate from the final substrate,and where the transfer is repeated, the spacer layer 16 is brought intocontact with the provisional adhesive layer 17. It follows that thedefective transfer can be prevented without fail by the spacer layer 16.

Also, FIG. 15 is a plan view showing a final substrate in which aframe-like spacer layer 501 surrounding the entire screen is formed onthe substrate 11 in place of the island-shaped spacer layers shown inFIG. 1. In this transfer substrate, the density of the spacer layer 501is substantially increased so as to make it possible to moderate thepressure applied to the substrate, with the result that it is possibleto suppress the defective transfer with a smaller spacer layer arearatio. In the arrangement shown in FIG. 15, it is desirable to arrangethe spacer layer 501 in the peripheral region 13 that is positioned asclose to the pixel region 12 as possible in view of the variousconditions.

FIG. 16 is a plan view schematically showing the relationship betweenthe region in which the adhesive layer 14 is arranged and the region inwhich the spacer layer 16 is arranged on the surface of the activematrix substrate 11. FIG. 16 shows that, in general, the adhesive layers14 are arranged at the constant pitches 1 x(0) and 1 y(0) on the activematrix substrate 11 as denoted by the broken lines. Where the activeelements 100 arranged at a high density on the single intermediatetransfer substrate 204 are transferred onto a plurality of finalsubstrates 11, a region 601 in which the spacer layers 16 can bearranged is determined by the position of the edges of the adhesivelayers 14 arranged on the periphery no matter how the spacer layer 16may be shaped. To be more specific, the spacer layers 16 are arrangedsuch that the inner edges of the spacer layers 16 are positioned awayfrom the inner edges of the adhesive layers 14 that are arranged at theoutermost circumferential region by the distances of 1 x(1) and 1 y(1),and the region 601 in which the spacer layers 16 are arranged isdetermined to be at the distances 1 x(1) and 1 y(1) as denoted by thebroken lines. In this case, it is necessary for the relationship of 1x(1)≧1 x(0) and 1 y(1)≧1 y(0) to be established.

The arrangement of the adhesive layers and the spacer layers accordingto a first modification of the first embodiment of the present inventionwill now be described with reference to FIG. 17. In the arrangementshown in FIG. 17, the adhesive layers 14 are arranged in symmetry withrespect to each of the horizontal and vertical center lines denoted bythe broken lines on the surface of the active matrix substrate 11. Thesize of the intermediate transfer substrate 204 is defined to be ¼ ofthe size of the pixel region 12 on the active matrix substrate 11 towhich the active element 100 is to be transferred. The active elements100 are arranged on the intermediate transfer substrate 204 at a densitynot lower than 4 times as high as the density of the active elements 100arranged on the final substrate 11. An n-number of active elements 100are arranged on the intermediate transfer substrate 204, and n−¼-numberof active elements selected from the n-number of active elements aretransferred from the intermediate transfer substrate 204 onto the finalsubstrate 11 by a single transfer operation. Therefore, all of then-number of active elements 100 is transferred from the intermediatetransfer substrate 204 onto the final substrate 11 by performing thetransfer operation 4 times. Since the distances 1 x(1) and 1 y(1)between a region 602 in which the spacer layers 16 can be arranged andthe adhesive layers 14 are defined to be in symmetry in each of theX-direction and the Y-direction with respect to each of the horizontaland vertical center lines, the pressure balance is further improved inthe process of bonding the intermediate transfer substrate to the finalsubstrate so as to suppress the nonuniform transfer.

FIG. 18 shows the arrangement of the adhesive layers 14 and the spacerlayers 16 according to a second modification of the first embodiment ofthe present invention. In the arrangement shown in FIG. 18, the adhesivelayers 14 in the adjacent columns are arranged deviant from each otherby a half pitch (1 y(0)/2). Similarly, the spacer layers 16 in theadjacent columns are arranged deviant from each other by a half pitch (1y(2)/2). It should be noted that the adhesive layers 14 in theeven-numbered columns have a period equal to that of the spacer layers16 in the even-numbered columns. Likewise, the adhesive layers 14 in theodd-numbered columns have a period equal to that of the spacer layers 16in the odd-numbered columns.

In the transfer according to the prior art, the defective transfer tendsto be generated when the distance between the adjacent adhesive layersis short, and the defective transfer tends to be generated such that theactive elements positioned between the adjacent adhesive layers are alsotransferred. It is considered reasonable to understand that thedeformation of the peeling layer in the periphery of the regioncorresponding to the adhesive layer 14 promotes the peeling of theactive element arranged between the adjacent adhesive layers. Such beingthe situation, where the pixel pitch is narrow, the distance between theadjacent adhesive layers 14 can be set long by arranging the adhesivelayers 14 deviant from the row and the column, compared with the casewhere all the adhesive layers 14 are arranged on the row and the column.It is desirable for the spacer layers 16 to be also arranged deviant inaccordance with the deviant arrangement of the adhesive layers 14. Bythis arrangement, it is possible to suppress the defective transfer thattends to be generated around the adhesive layers 14.

In the arrangement shown in FIG. 18, all of the pitches 1 x(0), 1 y(0)of the adhesive layers 14 in the pixel region 12, the pitches 1 x(2), 1y(2) of the spacer layers 16 in the peripheral region 13, and thedistances 1 x(1), 1 y(1) between the adhesive layer 14 and the spacerlayer 16 are set equal to each other. However, it is possible for thesepitches and the distances not to be equal to each other. It should benoted, however, that, where the active element 100 formed on the singleintermediate transfer substrate 204 is transferred onto a plurality offinal substrates 11, it is necessary for the conditions of 1 x(1)≧1 x(0)and 1 y(1)≧1 y(0) to be satisfied in order to prevent the defectivetransfer that the active element 100 is brought into contact with thespacer layer 16 so as to be transferred onto the spacer layer 16. Itshould also be noted that, in the arrangement shown in FIG. 18, thepositions of the adhesive layers and the spacer layers are allowed todeviate by a half period for every row and column. However, thepositional deviation noted above is not limited to the particular casenoted above. It is possible for the number “m” in the case of thepositional deviation by “m-periods” to denote an optional value. Also,it is possible for the value “m” in the row to differ from that in thecolumn. In the sense that the maximum distance is provided between theadjacent adhesive layers, it is desirable to provide the deviation by ahalf period as shown in FIG. 18. Incidentally, in the arrangement shownin FIG. 18, the columns are allowed to deviate from each other. However,in place of deviation of the column, it is possible to allow theadhesive layers 14 in the adjacent rows to deviate from each other by ahalf pitch (1 x(0)/2). Similarly, it is also possible to allow thespacer layers 16 in the adjacent rows to deviate from each other by ahalf pitch (1 x(2)/2, 1 y(2)/2).

If the distance 1 y(3) between the edge of the provisional adhesivelayer 17 and the edge of the spacer layer in the intermediate transfersubstrate is set larger than 1 y(0), the spacer layer is brought intocontact with the provisional adhesive layer 17 without fail when thetransfer is successively repeated with the intermediate transfersubstrate allowed to deviate from the final substrate. As a result, theeffect produced by the arrangement of the spacer layer 16 is increasedso as to prevent the defective transfer.

A second embodiment of the present invention will now be described. Inthe second embodiment, the spacer layers are formed in the periphery ofthe region of the intermediate transfer substrate to which the activeelement 100 is bonded. In the following description, those portionsalone of the second embodiment which differ from the first embodimentwill be described, and the same reference numerals are put to thecorresponding portions so as to avoid the overlapping description.

The second embodiment differs from the first embodiment described abovein that the spacer layer is not formed in the final substrate and thespacer layer is formed in the intermediate transfer substrate. Themanufacturing method of the intermediate transfer substrate and theactive matrix substrate for the second embodiment will now be describedwith reference to FIGS. 19 and 20.

As shown in FIG. 19, a spacer layer 701 is formed on the intermediatetransfer substrate 204. The spacer layer 701 can be formed by, forexample, forming first the peeling layer 205 on the intermediatetransfer substrate 204, followed by patterning the periphery of theregion to which the active element 100 is to be bonded so as to removethe peeling layer 205 and subsequently forming the spacer layer 701 inthe portion from which the peeling layer 205 has been removed. In thiscase, the thickness of the spacer layer 701 is set substantially equalto or larger than the sum of the thickness of the peeling layer 205, thethickness of the active element 100, and the thickness of the adhesivelayer. The material and the forming method of the spacer layer 701 areequal to those in the first embodiment. The peeling layer 205 can bepatterned by, for example, forming a photo resist on the peeling layer205 and by applying a sputter etching with, for example, Ar ions to thepeeling layer 205 with the photo resist layer used as a mask. Thetransfer can be achieved by bonding the intermediate transfer substrate204 having the active elements 100 transferred thereonto to the finalsubstrate having the adhesive layers 14 formed thereon, followed bypeeling the intermediate transfer substrate 204, in the secondembodiment, too. In this case, the spacer layers are not formed on thefinal substrate. However, the transfer process itself for the secondembodiment is equal to that for the first embodiment describedpreviously. It is possible to obtain the effects similar to thoseobtained in the first embodiment in the second embodiment, too.

In order to improve, particularly, the nonuniform transfer, it isdesirable for the thickness of the spacer layer 701 to be substantiallyequal to or larger than the sum of the thickness of the peeling layer205, the thickness of the active element 100, and the thickness of theadhesive layer. Also, it is possible to form the spacer layer 702 on thepeeling layer 205, as shown in FIG. 20. In this case, the producedeffect can be increased by making the thickness of the spacer layer 702substantially equal to the thickness of the active element 100 and,thus, a desired effect can be obtained by using the spacer layer 702having a smaller thickness. It should be noted, however, that, in thecase of using the peeling layer 205 that can be peeled by, for example,the heating because the spacer layer 702 on the peeling layer 205 is nottransferred simultaneously with the active element 100 in the transferstage, it is desirable for the heat treatment not to be applied to theregion in which the spacer layer 702 is formed. Also, in the case ofusing the peeling layer 205 that can be peeled upon irradiation with anultraviolet light, the region in which the spacer layer 702 is formedshould not be irradiated with the ultraviolet light. Incidentally, it ispossible to use in the second embodiment, too, the planar patterns ofthe spacer layers 701 and 702 similar to those for the spacer layersformed on the final substrate 11 in the first embodiment of the presentinvention described previously. Where the spacer layers 701 and 702 areformed on the intermediate transfer substrate 204 as in the secondembodiment, the spacer layers are not left on the final substrate thatis used finally as the active matrix substrate so as to lower thepossibility that the wiring formed in the subsequent step is not brokenby the stepped portion of the spacer layer. It follows that it ispossible to obtain the effect of enhancing the degree of freedom in thepattern of the spacer layer.

As described above, the present invention provides a manufacturingmethod of an active matrix substrate having a high transfer selectivity,an active matrix substrate that is manufactured by the particularmethod, and an intermediate transfer substrate used in the manufacturingmethod of the active matrix substrate.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1-24. (canceled)
 25. An intermediate transfer substrate, comprising: asubstrate having an element region and a peripheral region surroundingthe element region; a peeling layer formed on the substrate; a pluralityof active elements formed apart from each other on the peeling layer onthe element region; and a spacer layer formed in the peripheral regionon the substrate.
 26. The intermediate transfer substrate according toclaim 25, wherein the spacer layer has a thickness equal to or largerthan the sum of the thickness of the peeling layer and the thickness ofthe active element.
 27. The intermediate transfer substrate according toclaim 25, wherein the spacer layer and the adhesive layer are formed ofthe same material.
 28. The intermediate transfer substrate according toclaim 27, wherein each of the spacer layer and the adhesive layer isformed of an acrylic resin.